Qorvo QPD2560L 300W GaN/SiC HEMT is a high-power GaN-on-SiC High Electron Mobility Transistor (HEMT) designed for demanding L-Band applications, operating across the 1.0GHz to 1.5GHz frequency range. Engineered to deliver robust RF performance, the Qorvo QPD2560L provides up to 55.4dBm of saturated output power, 15dB of large-signal gain, and 65% drain efficiency, making the HEMT well-suited for both CW and pulsed operation. The device features an internally pre-matched input to simplify external matching requirements and reduce board space, while the output remains unmatched for design flexibility. Housed in a rugged NI-650 industry-standard air-cavity package, the QPD2560L is optimized for L-Band military and civilian radar, electronic warfare, professional communications, ISM applications, and wideband/narrowband high-power amplifiers. The device's long-pulse capability and high thermal robustness further enhance the suitability for mission-critical RF systems.
