Efficient Power Conversion (EPC) EPC2302 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is engineered for high-frequency DC-DC applications to/from 40V to 60V and 48V BLDC motor drives. This eGaN® FET features 1.8mΩ maximum drain-source on resistance RDS(on) and 100V drain-source breakdown voltage (continuous) VDS in a low inductance 3mm x 5mm QFN package. The package has side-wettable flanks and an exposed top for excellent thermal management. The thermal resistance to the case top is ~0.2°C/W, offering excellent thermal behavior and easy cooling. The EPC2302 enhancement-mode power transistor from EPC enables efficient operation in many topologies while improving efficiency and saving space.
